Switching of the nanocryotron-driven ‌charge configuration memristor in real time

A. Mraz,1,2 R. Venturini,1,3 D. Svetin,1,2 I. Vaskivskyi,1,2 T. Lotrič,1 B. Brezec,1 M. Merljak,1
D. Kazazis,4 J. Ravnik,4 S. Gerber,4 Y. Ekinci,4 V.V. Kabanov,1 D. Mihailovic1,2

1Jozef Stefan Institute, Dept. of Complex Matter, Jamova 39, SI-1000 Ljubljana, Slovenia

2CENN Nanocenter, Jamova 39, SI-1000 Ljubljana, Slovenia

3Faculty for Mathematics and Physics, University of Ljubljana, Jadranska 19, SI-1000 Ljubljana, Slovenia

4LMN-Paul Scherrer institute, Villigen, Switzerland

To improve the field of superconducting computer systems, a low-power, fast and durable memory device that is compatible with the single-flux-quantum (SFQ) logic is needed [1,2]. Here we report on recent progress in the development of a so-called parallelotron (pTron) [3] device that comprises a superconducting three-terminal amplifying nanowire cryotron (nTron) [4] and a charge configuration memristor (CCM) [5,6] based on 1T-TaS2. Besides the current-voltage characteristics and read operation, we also record switching of the device in real time when the switching pulse is applied to the control terminal. Measured results show great matching to model predictions, demonstrating the validity of the model and its potential usefulness for future optimization of the device’s parameters. We briefly discuss the effect of noise on the switching capabilities of the pTron device.

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